Modulated Nanostructure: Nanowire bridging transistors: The new Buzz word for next-generation electronics

Silicon has been established as one of the widely used material in the integrated circuit since approximately 60 years. It is used to fabricate transistors using conventional method, where etching of the layers was done to formulate some structures. However, circuit based on silicon reach its operational speed limit and does not work above certain temperature. In addition to that, ever increasing demand of miniaturization has led to the development of advanced manufacturing technique where nanostructure material plays significant roles along with the addition of other semiconducting material such as gallium nitride. It does not only show promise for a new generation of fast, robust electronic and photonic devices, but also opens up the scope of innovation for the researchers. Such is the case of three dimensional nanowire transistors, developed by scientists of University of California.

 

 One of the technical problem silicon substrate is facing over the years is the lattice parameter mismatch with other materials. Match is necessary due to the growth technique associated with integrated circuit, which in turn faces major limitation as far as the growth material is concerned. To overcome these challenges, nanowire made of semiconductor materials was made on top of silicon surfaces. Due to the lower surface area of nanowire which acquires the place of silicon, problem of lattice mismatch does not arise. The new technology could be used, for example, to build sensors that can operate under high temperatures, for example inside aircraft engines. In the near future, machine will be dependent on a variety of sensors and control systems that operate in extreme environments, such as motor vehicles, boats, airplanes, terrestrial oil and ore extraction, rockets, spacecraft, and bodily implants.

 

The researchers have been able to make these nanowires operate as transistors, and combine them into more complex circuits as well as devices that are responsive to light. They have developed techniques to control the number of nanowires, their physical characteristics and consistency. The technology also leverages the well-established technology for manufacturing silicon integrated circuits.